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| HUR6060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode A C Dim. A B C D E F G H J K L M N Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 HUR6060 VRSM V 600 VRRM V 600 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TVJ=TVJM TC=110oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=1.6A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive o Maximum Ratings 70 60 600 0.3 0.2 -55...+175 175 -55...+150 230 0.8...1.2 6 Unit A A mJ A o C W Nm g HUR6060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=150oC TVJ=25oC Test Conditions Characteristic Values typ. max. 650 2.5 1.39 2.04 0.65 0.25 Unit uA mA V K/W ns IR VF RthJC RthCH trr IRM IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C o 35 8.3 A FEATURES * International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch HUR6060 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode 160 A 140 IF 120 4000 nC 3000 TVJ= 100C VR = 300V 80 A 60 TVJ= 100C VR = 300V TVJ= 25C 100 Qr 2000 TVJ=100C 80 IF=120A IF= 60A IF= 30A IRM 40 IF=120A IF= 60A IF= 30A TVJ=150C 60 40 20 0 0 1 VF 2 V 0 100 0 A/us 1000 -diF/dt 0 200 400 600 A/us 1000 800 -diF/dt 1000 20 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 ns 130 Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 1.6 us tfr 1.2 2.0 TVJ= 100C VR = 300V 1.5 Kf 1.0 trr 120 110 tfr IF=120A IF= 60A IF= 30A VFR 0.8 10 IRM 100 0.5 5 0.4 Qr 90 80 0 0 200 400 600 -diF/dt 800 A/us 1000 0 TVJ= 100C IF = 60A 200 400 0.0 600 A/us 1000 800 diF/dt 0.0 0 40 80 120 C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.0385 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case |
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